ABSTRACT
We are familiar with the two-terminal electrical components—the resistors, the capacitors and the inductors. According to Leon Chua there should be another relationship that includes non-linear systems and relates the change in electric charge moving through a circuit to the change of flux surrounding the circuit. This fourth non-linear circuit element is called Memristor—a memory-resistor as it promised to store information as a memory element. Memresistance is an intrinsic property of any electrical circuit observable only at scaled down dimensions. The first memristor device was realized in the HP labs in 2008. It can be designed from basic passive and active electronic circuit components to realize the electrical characteristics required. There are different models which have been used to account for the memristive behavior of this physical device. The memristors have great potential in the design of integrated circuits by addressing several important aspects of the VLSI chip designs and computational areas as Non-Volatile-Random-Access-Memory (NVRAM), associative memories, low-power memory as well as distributed state storage, dynamically adjustable load, programmable resistance, electronically adjustable filters and amplifiers. Memristors have 244great potential in image recognition and image processing applications and have been used in a switched-on radio frequency antenna.
