ABSTRACT
The foremost attraction to research across the globe now featured about the resistive memory device (Re-RAM or RRAM) where the memory performance predominantly more instigated from “resistive” change compared with “capacitive” one (CMOS device) reckoning to be latent alternative for CMOS, has paved the system for several proposition for memory storage devices. The forked process of internet–IoT technology requires more high-density memories, The Von Neumann architecture relies in modern computers for in-memory computation, thus eradicating the energy-intensive and time-overwhelming data movement, the vulnerable state-of-the-art technology involving in neuromorphic computing plagued an energy efficient high storage memory design–all can be attributing from resistive switching memory, an ultimate nonvolatile memory device liable to its faster speed, less power consumption, enhanced storage density, high temperature stability, potential applications in numerous fields, and exceptional scalability. In this literature, the long voyage to the RRAM toward the enhancement of data storage capacity is reviewed in a 34comprehensive manner. Starting with the pivotal aspects resembling the field of incipient memory techniques, switching mechanism and electrical characteristics, innumerable issues on endurance, retention, and uniformity, various material preparation techniques for RRAM development are deliberated in this discussion. This chapter is also emphasized on memory storage competency of RRAM incorporating multilevel cell (MLC) to achieve improved storage density. Physical mechanisms involved to attain reliable operation of MLC operation are elaborated in this review with a conclusion to relative merits and elucidate challenges involved in future aspects of RRAMs.
