ABSTRACT
Multigate MOSFET structures are likely to take up the baton for future applications. Among different multigate structures, silicon nanotube (Si-NT) FETs exhibited promising electrical characteristics and have been hailed as the most promising device structure for the mainstream CMOS technology owing to their geometrical structure that provides excellent electrostatics control as well as better drive current capability. Thus, this chapter highlights the detailed Si-NT FETs device concept, their structure, and also presents an insight into their operation. Efforts in the fabrication of better-scaled devices like Si-NT FETs must be supported by proper circuit design to get the best performance figures. In order to facilitate circuit simulation with such advanced technologies, the analytical model formulation has also been presented in this chapter. The main focus has been the development of a unified drain current model of Si-NT FETs incorporating short-channel effects (SCEs) and quantum effects. The model fits TCAD data very well across a wide range of voltage biases and physical device parameters. The model has been developed using a 154surface-potential approach, which is in line with the current commercial industry standard BSIM-CMG framework.
