Introduction

This introduction presents an overview of the key concepts discussed in the subsequent chapters of this book. The book provides an overview of the current trends of fabless smart manufacturing in the era of the internet of things. It discusses several phases of development in the semiconductor industry. The book presents the nanowire (NW) transistor design. It also discusses the impacts of metal grain granularity and random discrete dopant in the channel, source, and drain extensions on device performance. By using physics-based 3D Technology Computer-Aided Design simulation and device optimization beyond the 7 nm technology node, the book shows possible improvements in critical design parameters for the vertically stacked nanosheet transistors to surpass NWFET technology. It then combines the potentials of a mature and reliable rigid silicon technology with the promising opportunities of mechanical bendability.