ABSTRACT
Owing to the demands generated by the internet of things applications on having low power and low leakage devices, nanowire devices are becoming very important. The field-effect transistors are today the cornerstone of microelectronics and the component becomes ubiquitous in everyday life. Gate-all-around transistors are based on nanowire and nanosheets. Nanowires and nanosheets have the advantage of having a smaller channel and a high surface-to-volume ratio as transistor sizes shrink. Today transistors are fabricated Silicon on Insulator substrates. These substrates are made using SmartCut technology, which involves a thin layer of high-quality monocrystalline silicon on a substrate of lower quality thus reducing the production costs, and on the other hand, results in a new architecture with an insulator that separates the bulk substrate and the transistor channel. This chapter discusses the effect brought by extreme reduction of the channel and gate lengths in multigate transistors.
