ABSTRACT
This chapter describes materials for NVM technology, especially HfO2, its properties, how it is useful for baseline NVMs and emerging NVMs, and its prospects and concomitant challenges. It discusses the impact of the manufacturing system on the film qualities. Nevertheless, the interstitial doping of the HfO2 can lead to the design of the metal-CF-based ECM devices, which is elaborated in the following section. Electronic switches constructed with atomic-sized functional blocks are considered to be the ultimate goal of device scaling; however, it is indeed a mammoth task. Additionally, the location of the metal electrode, process condition of HfOx deposition along with HfOx film density, and stoichiometry can have a massive impact on the performance of the resistive switching device. Dielectric properties of HfO2 have been extensively explored in baseline flash memory devices, which can effectively reduce EOT and introduce nanolaminate structures with MPB composition.
