Preparation and characterization of Mo-doped In2O3 thin films with magnetron Co-sputtering

Mo was used as a dopant to deposit In2O3 thin films with different doping contents on quartz substrates by magnetron co-sputtering. XRD results show that the structure of the doped In₂O₃ film is still cubic ferromanganese. Scanning electron microscopy observations show that as the power applied to the Mo metal target increases, the film surface is uniform, but the crystallinity becomes poor. The thickness of the prepared sample film is 400 nm. The results of the energy dispersive X-ray show that the Mo element is doped into an In₂O₃ thin film. The electrical performance shows that all deposited films are n-type semiconductors. The resistance of the IMO film is the smallest when the DC power on the Mo target is 15w, its value is 0.97×10⁻³ Ω•cm, and the maximum mobility is 73.6 cm²V⁻¹s⁻¹. The carrier concentration can reach 9.1×10¹⁹ cm³ when the DC power is 20 W. The optical band gap of the film increases from 3.746 eV to 3.909 eV with the increase of applied DC power.