ABSTRACT
Si-based high-speed optoelectronic devices are keystones for over 100 Gbps data communication potentially applied in data centers, high-performance cluster computing, and cloud computing servers. A unique process using the RMG method, in combination with the self-aligned microbonding technique, is applied to heterogeneously integrate monocrystalline Group IV semiconductor on Si photonic devices. This process doesn’t require complex epitaxy process steps to deal with the lattice mismatch issue between different semiconductors, and the thermal budget is relatively small, which is most compatible with the standard CMOS process. Several waveguide-based high-speed Si/Ge/Sn photodetectors are presented, including Si/Ge heterojunction waveguide pin, Si/Ge butt-coupling waveguide photodetectors, and GeSn photodetectors.
