ABSTRACT
LEDs are the backbones of many of communication systems, used as display backlighting, medical services, and signage. LEDs’ functional needs, materials, and interfaces make their failure modes and mechanisms different from microelectronics. Luminescent devices made from gallium nitride (GaN) are examined to see how they fail and what causes it (LEDs). Many reliability tests are presented, and various LED deterioration mechanisms are examined. As a prelude to a more in-depth discussion of these topics, the first section of this chapter provides an overview of the key mechanisms that affect the optical and electrical behaviour of devices below and above optical turn-on. Diffusion-related degradation processes are studied extensively in the second section of this paper. Discussions on possible physical models for the degradation of GaN-based optoelectronic devices are presented in the concluding section. The reported findings shed light on the shortcomings of LED technology and the design of reliability testing techniques. Throughout the essay, results are compared to literature data.
