ABSTRACT
This chapter discusses nonlinear selector devices for three-dimension X-point memory arrays and self-selective cells mainly for three-dimension vertical memory arrays. Firstly, the definitions and characteristics of several selector devices such as tunnel barrier-based selectors, metal conductive filament-based threshold switching selectors, metal insulator transition selectors, and ovonic threshold switch selectors are demonstrated. The three-dimension vertical resistive random access memory shows better characteristics than the memory based on three-dimension X-point arrays. Therefore, as the only candidates for constructing the three-dimension vertical memory arrays, the self-selective cells with rectifying and built-in nonlinearity characteristics are introduced. In addition, recent studies on self-selective cells with threshold type selection layer and self-selective cells with exponential type selection layer are discussed in detail.
