ABSTRACT
This chapter discusses the resistive random-access memory (RRAM) devices for beyond-storage applications, including neuromorphic computing, in-memory computing, and physical unclonable functions. For neuromorphic computing, recent progress of the RRAM devices serve as artificial synapses, artificial neurons, and neural networks are presented. Also, the possible application in the neuromorphic sensing field is discussed. Then, the RRAM devices used for in-memory computing in a 3D array architecture and even at a macro level are overviewed. Also, recent works that implemented reservoir computing based on 3D dynamic devices are presented. At last, the realisation of physical unclonable function (PUF) based on the controllable nonlinearity of the RRAM device is reviewed. These applications show that RRAM devices are promising candidates for beyond-CMOS demonstration, having a great potential to promote next-generation electrical products.
