ABSTRACT
In this chapter, we consider the solid-state implementation of terahertz (THz) power amplifiers. As frequency increases, the transistor has a limited gain and power which requires certain technologies and design techniques. The key challenges and design options are discussed. The chapter reviews the amplifier design fundamentals such as loadline matching, unit cell, and different power combining techniques. The pros and cons of III-V and silicon technologies are discussed. We addressed oscillations and thermal heating, which are common practical issues. We discussed the setup of the THz S-parameter and power measurements. Finally, the measurement results of several examples are presented the across 140–600 GHz frequency band.
