ABSTRACT
Pixel detectors are an essential part of experimental high-energy physics instrumentation. The Readout Integrated Circuit (ROIC) contains dedicated amplification and discrimination channels per pixel (front-end) that operate in parallel followed by parallel processing of the output signals which are most commonly digitized in the pixel. The pre-amplifier of a ROIC front-end chain is commonly implemented using a capacitive feedback loop and is referred to as a Charge Sensitive Amplifier (CSA). Pixel detector and CMOS ROIC characteristics are affected by radiation damage that occurs during their lifetime. An alternative approach to hybrid pixel technology is to combine the sensor and readout electronics in the same silicon crystal and form a monolithic pixel that can be produced using commercial CMOS technologies. The CDR/PLL test chip was irradiated with X-rays up to a total TID of 600 Mrad to assess its radiation tolerance.
