ABSTRACT
The functionality and performance in integrated circuits can be improved by scaling the transistor dimensions. As the transistors are scaled down, maintaining reliability is of utmost importance. FinFET and gate-all-around FET, due to their increased gate area, exhibit better reliability. However, the continuous scaling-down of device dimensions below 5 nm leads to certain fabrication obstacles and self-heating effects, prompting the research direction to shift to other devices. One such popular device is nanosheet field effect transistor (NSFET), which shows better immunity to short channel effects. In this chapter the DC/RF performance of NSFET is investigated with respect to device dimensions, substrate materials, and gate metals. The variation in performance is analyzed for different phenomena like parasitic channel effect, thermal effect, and source/drain metal depth effect. The chapter also gives an insight into the potential low-power applications of NSFET.
