ABSTRACT
Graphene has ultra-high carrier mobility (77,000 cm2V−s−1) and saturation velocity, which makes it compatible with high-speed circuit applications. This chapter provides a detailed report on several analytical modeling approaches for graphene-based FET devices, which include drift diffusion, gradual channel approximation, virtual source, and ballistic approaches. Device modeling plays an important role in predicting the device's performance and is used to reveal the physics behind it. In addition, the compact model of the device will be used in the development of electronic design automation (EDA) tools, which are used for the circuit simulation.
