ABSTRACT
The enormous demand for electronic devices has sparked a new revolution in VLSI technology. VLSI technology applications have extensively expanded to various electronic devices from mobile phones to military and defense operations, global communication systems, GPS positioning systems, satellites, radars, and the medical field – and the limit is yet to be reached. Almost all electronic gadgets contain memory as their integral part to store as well to perform various operations on the data wherever it is required. With the emergence of the Internet of Things (IoT) and Systems on Chips (SoCs), the demand for efficient design of SRAM cells is increasing very rapidly. In order to cope with the ever-increasing demand, the analysis of the various aspects of the SRAM cell design is a must. This chapter gives a brief introduction to the various SRAM cell including standard 6T SRAM as well as some advanced SRAM cells. Various performance parameters, and the impact of the nanoscale device on these parameters, are illustrated. A brief description of the various analyses using EDA tools is also provided. Furthermore, an 10T SRAM cell is discussed as an alternative for the IoT application.
