ABSTRACT
Self-heating leads to overheating of the device, which degrades the device performance and also affects device reliability. This chapter focuses on understanding the heat transport in nanoscale electronic devices. It describes the mathematical model for incorporation of self-heating in fully depleted silicon-on-insulator (FD-SOI) devices and conventional metal-oxide-semiconductor field-effect transistors. The electrothermal device simulator was initially used to study the effects of self-heating on the electrical characteristics in different generations of nanoscale FD-SOI devices. Simulation results suggest that self-heating has a less degrading effect on the on-current in smaller devices in which the nonstationary transport and velocity overshoot effects dominate the carrier transport. Due to the quasi-ballistic nature of the carrier transport, there is less scattering in the active channel region; therefore, there is a smaller probability of the transfer of energy to the lattice. The chapter also focuses on the comparison of performance degradation due to self-heating effects in single-gate and vertical dual-gate devices.
