ABSTRACT

This chapter aims at using full-band Monte Carlo simulation coupled with phonon transport to quantify the extent and location of Joule heating in a silicon metal-oxide-semiconductor field-effect transistor (MOSFET). It also aims to map the propagation of phonons after they are emitted and generate distributions of elevated lattice temperatures using these combined approaches. The chapter explores the effects of phonon heating and propagation in a representative silicon device. Data on scattering events in a device can be obtained from a Monte Carlo simulation. Once the simulation run is complete, data on all phonon events that occurred are tabulated. Then phonon velocity is looked up from the dispersion relationship for each phonon and each phonon is allowed to move without scattering until the end of the simulation time frame. The chapter examines the generation of heat in silicon MOSFETs using self-consistent Monte Carlo device simulation with full electron band structure and full phonon dispersion computed from the adiabatic bond charge model.