ABSTRACT
Experimental data on the effect of gamma irradiation on the static and dynamic electrical characteristics of high voltage power static induction transistors (SIT’s) are presented, with the emphasis given to the switching time and on-resistance of the device. The effective lifetime of holes injected from the gate into the n—-epi-layer is also measured. Changes of the parameters caused by subsequent post-irradiation heat treatments given to SIT’s are monitored. The comparative role of different types of point deep-level radiation defects acting as lifetime killers is discussed. The obtained results are indicative of the predominant role of E-centers and divacancies in the recombination inside the active region of SIT’s. The presented data can be useful in optimizing the irradiation/anneal conditions for achieving the best tradeoff between on-state and turn-off losses of SIT’s.
