ABSTRACT
For investigation of doped areas, p-n junctions and defects in conventional SEM the EBIC (Electron Beam Induced Current) imaging technique is widely applied with lateral resolutions down to the sub μm range. In this contribution it is demonstrated that using very low beam energies (energy range between 1 and 3 keV) in a FEG-SEM resolutions better than 0.2 μm can be obtained. Regarding the optimisation of the voltage and the beam diameter best resolution was achieved between 1 and 1.5 kV. The utilisation of low-voltage EBIC additionally proved to be more advantageous in determining the absolute dimensions of doped regions compared with other techniques.
