ABSTRACT
The combination of cathodoluminescence microscopy/spectroscopy, analytical electron microscopy, and transmission electron microscopy was used to study the behavior of Cu near dislocations in n-type GaAs for various diffusion conditions. Complicated defect reactions were observed for low cooling rates after the Cu diffusion. The dislocations are decorated with Cu precipitates. The detailed examination of the defect reactions allows to analyze the diffusion mechanism of Cu. It is concluded that the Cu diffusion in GaAs is governed by an interstitial-substitutional mechanism.
