ABSTRACT
A study is presented of the microstructure of Te and GaAs clusters which arise during embedding of guest materials in regularly distributed cavities of synthetic opal – novel template for creating 3-D cluster lattice. The contents of clusters in both cases were identified by EDX as Te and GaAs materials. Electron diffraction and HREM of clusters revealed surprisingly single crystal structure over large areas of several microns. From this it is evident that the growth of the Te and GaAs is controlled by the unique spatial environment.
