ABSTRACT
On-line process and quality control in silicon wafer manufacturing has been realized by using noncontact laser-based measurement techniques. Among them the scanning infrared depolarization (SIRD), the photothermal heterodyne (PTH) and the photoluminescence heterodyne (PLH) are demonstrated to be effective tools for the monitoring of process-induced defects. Examples of defect analysis are presented within the field of thermal processing and handling of silicon wafers.
