ABSTRACT
Photoluminescence (PL) spectroscopy under ultraviolet (UV) light excitation has been applied to the characterization of silicon-on-insulator (SOI) wafers. The shallow penetration depth of the UV light enables us to detect PL signal due to the degenerate electron-hole system in the SOI layer. Temperature dependence of the PL spectra reveals that the characteristic line due to electron-hole plasma (EHP) is observable at room temperature. The intensity variation of the EHP signal on an SOI wafer is demonstrated in relation to the defect recognition.
