Contact potential difference methods for full wafer characterization of oxidized silicon

We discuss the Contact Potential Difference, CPD, mapping of device and processing related properties of oxidized silicon wafers. Selected examples of this rapidly expanding methodology include: monitoring of plasma damage, whole wafer mapping of the mobile ion concentration and mapping of the Si/SiO2 interface states. The two latter examples involve the use of corona discharge in air as a means for controlling the oxide charge in conjunction with CPD measurements. ^*