ABSTRACT
The LPS method has been successfully used to detect growth striation in silicon material. In general, these measurements show a good signal-to-noise ratio and a typical resolution of 30–60 μm. However, for material with high lifetime and resistivity (ρ > 1000 Ωcm), a much lower spatial resolution was observed. On the other hand, for low resistivity samples (< 1 Ωcm), a bad signal-to-noise ratio was seen. In this paper, possibilities are shown to overcome these two problems.
