ABSTRACT
A knowledge of the distribution of the lifetime and of the doping density in Silicon wafers is of great importance, in particular, in connection with the development of new type of devices and technological treatments. For quantitative mapping of these two parameters in Silicon substrates, we introduced and validated here a new method, based on Spectrally Integrated Scanning Photoluminescence (SI-SPL) measurements. High spatial resolution and wafer scale cartographic measurements can be carried out at room temperature in a fast and non-destructive way before and after successive processing steps.
