ABSTRACT
An experimental arrangement for the measurement of the local distribution of the etch pit density (EPD) of entire wafers is described. Imaging of the wafer by the light specularly reflected from the facets of the etch pits is used. The measured distributions can be used for the description of wafer quality, and statistical parameters and functions like true average EPD, histograms, etc. can be derived. Consequences for the accuracy of current standards for average EPD determination are discussed.
