ABSTRACT
Defects in proton-irradiated semi-insulating LEC GaAs have been investigated using photo-deep level transient spectroscopy (P-DLTS) and photo-induced current transient spectroscopy (PICTS), the results of which have been compared to distinguish between majority and minority charge carrier traps. The density of traps with activation energy up to ~ 0.56 eV has been measured vs irradiation dose by TSC (Thermally Stimulated Conductivity), while the density of the dominant defect EL2 has been monitored by high temperature capacitance-voltage measurements.
It has been observed that the density of the native traps at 0.37 eV together with that of the EL2 defect significantly increases with the irradiation dose; moreover, a new trap at 0.15 eV arises and quickly increases in number with the irradiation.
