ABSTRACT
A microscope combining Atomic Force Microscopy (AFM.) and Photon Scanning Tunneling Microscopy (PSTM) is used to analyse III-V semiconductor surface defects and layered structures. These synchroneous images lead to consistent information on the local topography and on the refractive index distribution with a subwavelength resolution in the range of 10–100 nm. The results satisfactorily illustrate the abitily of the instrument to check the technological steps in a device fabrication. The contrast specifications of the PSTM image are discussed.
