Surface induced defects in bulk Si and Si1-xGex crystals – merits and limits of electron paramagnetic resonance

Standard electron paramagnetic resonance (EPR) is one of the methods used up to now since decades for defect recognition in semiconductors. Merits and limits of EPR are demonstrated by the example of recent results on several complex defects in silicon which are formed in consequence of surface reactions. As the fundamental source of these defects we assumed the indiffusion of self-interstitials from a reaction layer on the surface covered with platinum or gold. Some of these defects are detected also in Si_1-xGe_x crystals.