ABSTRACT
The results of imaging of the new extended defects in Si crystal are presented. The defects are generated by moving dislocation near dislocation slip plane. Phase Stepping Microscopy (PSM), Micro Raman, AFM and Electron Acoustic Microscopy (EAM) were used for characterisation of the microtopography features near the defects in the crystal regions adjacent to dislocation slip plane. It is shown that along slip plane the characteristic extended defect exists with specific fine structure of the etching topography and extended impurity atmosphere. Asymmetry of impurity atmosphere relatively to slip plane position is found. Micro Raman signal cross the slip plane correlates with PSM and EAM measurements and can be explained by the existence of tensile stresses in the transverse to the slip plane direction. Another type of the defects also left in the trail of moving dislocation was analysed by AFM. It is supposed that the core of the dissociated dislocation is the high intensity source of intrinsic point defects responsible for both the defects nucleation and impurity atmosphere formation.
