Structural Investigations of Grown-in D-Defects in Silicon by 1:1 Correlation of Brewster angle LST and TEM

Grown-in D-Defects in Czochralski silicon wafers were investigated by a combination of Brewster angle laser scattering tomography (LST) and transmission electron microscopy (TEM). We observed single and paired octahedral defects varying in size between 30 and 150nm. Diffraction contrast investigations and the application of the Ashby-Brown criterion show that the lattice around the octahedral defects is in tension. This indicates that the defects are large vacancy clusters. Thus, silicon oxide can be excluded as a candidate for D-defects.