Optical and electrical characterization of deep traps in erbium doped silicon

Erbium doped Si epilayers grown by the liquid phase epitaxy (LPE) technique have been studied by means of optical and electrical characterization methods. Their optical emisssion at λ =1.54μm has been observed at T=2K with photoluminescence measurements after a thermal treatment. Junction spectroscopy analyses have identified the deep traps present at the epilayer-substrate interface and in the bulk substrate. A tentative attribution of their origin is here presented.