Effects of light illumination on electron traps in hydrogen-implanted n-type silicon

Effects of light illumination on electron traps in 170-keV-hydrogen-implanted n-type silicon with a dose of 2×10¹⁰ cm⁻² have been studied with deep level transient spectroscopy. In addition to the well-known vacancy-related defects, two hydrogen-related defects labeled H1 (E_c – 0.32 eV) and H2 (E_c – 0.49 eV) are produced by hydrogen implantation. It is found that vacancy-related defects decrease and hydrogen-related defects increase with below band-gap light illumination. The total defect concentration shows almost no change with light illumination in spite of the change of each defect concentration.