ABSTRACT
Si1-xGex single crystals grown by the Czochralski (CZ) technique have a gradient of x parallel to the direction of pulling. The defect structure of such crystals was studied with X-ray Lang transmission topography on the ( 1 ¯ 1 1 ) https://s3-euw1-ap-pe-df-pch-content-public-p.s3.eu-west-1.amazonaws.com/9781315140810/c990b9db-a87a-4526-ade7-32570fb656b8/content/eq109.tif"/> samples cut from the 〈110〉 Si1-xGex parallel to crystal axis. The observation of the dislocation contrast on projection topographs and the g·b = 0 rule for null contrast result in the 90° sessile and 60° glide dislocation types.
