Studies of buried (SiC)1-x(AlN)x layers formed by co-implantation of N+ and Al+ ions into 6H-SiC

Solid solutions of SiC and AlN are of current interest for applications in opto- and high-temperature electronics. In this work we show results from experiments aimed at exploring the formation of (SiC)_1-x(AlN)_x layers by coimplanting Al^f and N⁺ ions into 6H-SiC wafers held at elevated substrate temperatures during irradiation. Rutherford Backscattering Spectrometry in conjunction with Ion Channelling (RBS/C) and Positron Annihilation Spectroscopy (PAS) have been used to characterise the ion-induced damage and its evolution and, specifically, the dependence of defect structure on substrate temperature in the as-implanted state.