ABSTRACT
GaN layers with wurtzite structure were found to exhibit intense photoluminescence (PL) at 3.47eV (T = 10K) corresponding to recombination of excitons bound to neutral donors. The dependence of this luminescence on the growth conditions, layer thickness and density of excitation power was studied. New PL bands were evidenced in the UV region under high levels of excitation (Iexc > 0.56mJ/cm2).
