ABSTRACT
Optical-isothermal capacitance transient spectroscopy (O-ICTS) is used to characterize the mid-gap states in n-type GaN grown by hydride vapor phase epitaxy and metalorganic vapor phase epitaxy. Deep levels can be resolved by the emission rate of carriers in addition to the magnitude of the capacitance transient as a function of incident photon energy. The resulting O-ICTS spectra can be deconvoluted to estimate the concentrations and ionization energies of gap states with a high degree of confidence.
