ABSTRACT
The surface and the interface of CuPtB – type ordered (GaIn)P layers grown on nominally (001) GaAs by MOVPE have been investigated using TEM and AFM. By comparing the density of supersteps on the (GaIn)P surface with the density of antiphase boundaries in the ordered layers a correlation between both values was found. Thus, the antiphase boundaries are preferentially formed at supersteps of (GaIn)P and GaAs. The influence of the width of supersteps and (001) terraces and of the existence of vicinal regions on this correlation is discussed.
