ABSTRACT
The present contribution reports the effect of rare earth (RE) elements, holmium and/or erbium, addition during the liquid phase epitaxial growth on the density of some chemical and physical defects in InP and GaInAsP layers. The attempts have been made to correlate the quality of the materials with the growth technique and the growth parameters. The prepared samples were examined by SEM, temperature-dependent Hall effect and photoluminescence. The impact of RE admixture on the electrical parameters and narrowing of photoluminescence spectra in the high energy region is quite dramatic.
