ABSTRACT
The spectra of photoconductivity, photoluminescence, Raman scattering and optical absorption were investigated in high-resistivity, undoped ZnSe crystals, which were irradiated with nanosecond ruby laser pulses of subthreshold intensity. A phenomenon of an increase in the steady-state photoconductivity of irradiated ZnSe crystals with low accidental impurity concentration was revealed. The modification of investigated spectra was due to a laser-induced change in the point defect structure. The highest laser radiation intensity permissible in ZnSe optical components operation should be limited with to the value at which changes in the photoelectric characteristics were observed.
