ABSTRACT
GaN and its related group III nitrides serve as the base materials for many important applications, such as light-emitting diodes (LEDs), laser diodes (LDs), and high electron mobility transistors (HEMTs). Silicon, as a standard material for traditional Si-based very-large-scale integrated (VLSI) circuits, is becoming a preferred substrate for GaN heteroepitaxy. There are two major advantages of the GaN-on-Si platform. The first advantage is the possibility for the GaN devices to be compatible with the automated processing equipment developed for Si VLSI to reduce the cost of device fabrication. The second advantage is the potential of integrating GaN-based electronics and photonics with Si-based electronics via wafer bonding technology. In this chapter, a foundry-compatible GaN-on-Si platform is developed on 200 mm diameter 725 μm thick Si wafers to explore the full advantages of GaN-on-Si.
