ABSTRACT
This chapter introduces the basic physical properties and main characterization techniques of III-nitride semiconductor materials, aiming at promoting the relevant research as well as the industrialization of III-nitride semiconductors. Group III nitrides can be of various crystalline structures: wurtzite, zinc blende, and rock salt. Polarization charge is an exhibition of spontaneous polarization and piezoelectric polarization of nitride semiconductors. The chapter shows a schematic configuration of Metalorganic chemical vapor deposition (MOCVD) for III-nitrides, which includes several important parts, such as gas delivery and blending system, reactor, and exhausting system, and so on. It also shows a schema of a common plasma-assisted molecular beam epitaxy growth chamber used for III-nitrides growth. The Van der Pauw Hall measurements are frequently employed to measure the electrical properties of III-nitride, such as resistance, doping type, carrier concentration and mobility of the majority carrier. The Shubnikov-de Haas oscillations arising from the formation of Landau levels are visible at low temperatures and high magnetic fields.
