ABSTRACT
III-nitrides are very promising compound semiconductors which attracted strong attention for both microwave and power switching applications. The electrical properties, namely the high carrier mobility and current density, the outstanding breakdown field and the possibility of operating at very high temperature, make this material very suitable for the fabrication of the next generation of microwave, millimeter-wave, and power switching devices. Defects are originated by the deviation in the crystalline structure of the perfect periodic arrangement of atoms in the ideal lattice. Several methods can be used for the extrapolation of the time constants of the charge emission processes: the multiexponential fitting, the analysis of the derivative of the current transients, and the stretched exponential fitting have been adopted by various research groups. Neglecting the self-heating of the devices during the analysis of the current transients may lead to a wrong extrapolation of the Arrhenius plots.
