ABSTRACT
This article describes the metalorganic vapor-phase epitaxy (MOVPE) of group III-nitride materials. Emphasis is placed on the chemistry, growth mechanisms, and materials properties that transformed III-N MOVPE growth from a backwater research topic in the early 1980s to bright blue LEDs in the 1990s; ultimately leading to the solid-state lighting revolution of today. This article includes descriptions of the heteroepitaxial GaN growth process, in-situ monitoring of growth, n- and p-type doping, and alloy growth necessary for LED-based devices. While it is widely believed that blue LED technology has been mastered, several remaining areas of research are posed in the conclusion section.
