ABSTRACT
Power electronic device plays a critical role in the generation, storage, conversion, and distribution of the electrical energy. Because the global energy shortage is, from time to time, an international crisis and economic threat, people have the demand on more advanced power semiconductor to provide efficient control of the power system. Wide bandgap (WBG) semiconductor power devices not only provide outstanding performances but also promise their functions in harsh environments, where the silicon power device is prohibited. Beyond the material properties, several figures of merit (FOMs) can be proposed to benchmark different semiconductor materials. The higher value of FOM shows better performance for the material. A high electron mobility transistor (HEMT), also known as heterostructure field-effect transistor (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different bandgaps without doped region as an inversion channel.
