ABSTRACT
The use of p-n tunnel junctions for applications in gallium nitride (GaN)-based electronic and optoelectronic devices has become increasingly attractive. The probability of interband tunneling across a potential barrier is mainly governed by the tunneling barrier height determined by the bandgap and the tunneling barrier thickness. For the application in solid-state lighting, the development of high-efficiency and high-power III-nitride light-emitting diodes (LED) is required. Direct interband tunneling in a p-n junction between the valence and conduction bands in an external applied electric field is commonly referred to as a tunnel junction, or an Esaki junction, or a Zener tunneling diode under reverse bias. The monolithic structure with multiple LEDs stacked by tunnel junctions was introduced. The concept of stacking identical LED structures with tunnel junctions is investigated for green InGaN LEDs to probe its effectiveness. The chapter explores several design approaches of the GaN-based polarization-assisted tunnel junctions.
