ABSTRACT
This chapter discusses several simulation approaches for the numerical study of the transport and optoelectronic properties of gallium nitride (GaN) nanowire (NW) diode structures with an embedded InGaN quantum dot (QD). It describes briefly the different physical models that need to be applied for an adequate description of these devices. Quantum mechanical models are used for the calculation of eigenstates of confined particles in nano-structures, either based on the envelope function approximation or on atomistic approaches. A more accurate approach for the study of quantum properties of nanostructures is based on atomistic methods. A correction to a purely classical description of transport in the NW QD light-emitting diode (LED) is needed to account for quantum effects. The chapter considers an example of a multiscale simulation applied to a NW QD LED. A self-consistent classical/quantum calculation is again performed, but this time the information on quantum density of electrons and holes is obtained by an atomistic model.
