ABSTRACT
This chapter considers a simulation domain consisting of two-dimensional or three-dimensional space with gas, surrounded by metal walls. Gas inlets and outlets, and heated substrates are special boundary conditions. Metalorganic chemical vapor deposition is widely used in the epitaxial growth of compound semiconductors such as Gallium nitride and related ternaries and quaternaries. The combination of process and device simulation for semiconductor technology modeling is often termed technology computer-aided design. InGaN multiple quantum well light-emitting diodes have attracted considerable attention for general lighting applications and hold promise for replacing the conventional incandescent and fluorescent lamps. A key simulation task in conventional technology computer-aided design process simulation is to solve the diffusion equations over the simulation mesh to predict the impurity doping profile after thermal processing. The chapter provides an overview of the theories and principles of semiconductor growth process modeling mainly for compound semiconductors.
